DocumentCode
2609832
Title
Electromigration Failure in Hieavily Doped Polycrystalline Silicon
Author
Polcari, M.R. ; Lloyd, J.R. ; Cvikevich, S.
Author_Institution
IBM KINGSTON, KINGSTON, N.Y. 12401
fYear
1980
fDate
29312
Firstpage
178
Lastpage
185
Abstract
Electromigration induced failures have been observed in both n & p doped polycrystalline silicon conductors. The location of the failure sites was found to depend upon the sign of the charge carrier. Migration of the dopant was identified as the failure mechanism.
Keywords
Anodes; Cathodes; Conductors; Current density; Electrical resistance measurement; Electromigration; Electrons; Silicon; Temperature measurement; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1980. 18th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1980.362936
Filename
4208332
Link To Document