DocumentCode
2610002
Title
Effects of Silicon Nitride Encapsulation on MOS Device Stability
Author
Sun, R.C. ; Clemens, J.T. ; Nelson, J.T.
Author_Institution
Bell Telephone Laboratories, 555 Union Boulevard, Allentown, Pennsylvania 18103
fYear
1980
fDate
29312
Firstpage
244
Lastpage
251
Abstract
A new threshold instability phenomenon has been observed in Sigate MOS transistors encapsulated with plasma deposited silicon nitride films. The saturation mode threshold has been observed to drift as much as ¿0.5V when the MOSFET is operating with high drain voltage. Through a series of experiments it is concluded that this instability is due to a chemical effect associated with hydrogen in the nitride films. The formation of surface states and fixed charges in the channel region due to the-interaction of hot carriers with hydrogen present at the interface is proposed to be the basic mechanism. Experimental results with respect to voltage, time and device geometry, will be discussed.
Keywords
Encapsulation; Hydrogen; MOS devices; MOSFET circuits; Plasma chemistry; Plasma devices; Plasma stability; Semiconductor films; Silicon; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1980. 18th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1980.362948
Filename
4208344
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