DocumentCode
2610047
Title
Alpha-Particle-Induced Soft Errors and 64K Dynamic RAM Design Interaction
Author
Mcpartland, M.J. ; Nelson, J.T. ; Huber, W.R.
Author_Institution
Bell Telephone Laboratories, Inc., 555 Union Boulevard, Allentown, Pennsylvania 18103
fYear
1980
fDate
29312
Firstpage
261
Lastpage
267
Abstract
An n-channel 64K dynamic RAM has been designed having an alpha particle induced soft error rate near one soft error per 107 device hours (100 FITS). Primary design considerations affecting the soft error rate are effective cell charge, signal degrading noise, sense amplifier to column impedance, polysilicon column layout and sense amplifier layout. Cell, column and sense amplifier alpha particle induced soft errors have been simulated using SPICE. Three classifications of sense amplifier soft errors have been illustrated. Two can be nearly eliminated by adequate signal, the other cannot and is strongly influenced by the sense amplifier to column impedance. Predictions by simulation have been confirmed by accelerated measurements of alpha particle induced soft error rates.
Keywords
Acceleration; Alpha particles; DRAM chips; Degradation; Error analysis; Impedance; Particle measurements; Predictive models; SPICE; Signal design;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1980. 18th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1980.362951
Filename
4208347
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