• DocumentCode
    2610808
  • Title

    Modeling and fast simulation of RF-MEMS switches within standard IC design frameworks

  • Author

    Niessner, M. ; Schrag, G. ; Wachutka, G. ; Iannacci, J.

  • Author_Institution
    Inst. for Phys. of Electrotechnol., Munich Univ. of Technol., Munich, Germany
  • fYear
    2010
  • fDate
    6-8 Sept. 2010
  • Firstpage
    317
  • Lastpage
    320
  • Abstract
    We present a macromodel of an electrostatically actuated and viscously damped ohmic contact RF-MEMS switch suitable for direct implementation in standard IC design frameworks. The physics-based and multi-energy domain coupled model is systematically derived on the basis of a hierarchical modeling approach. The very good agreement with measurements proves the capability of the model to predict the behavior of the RF-MEMS switch. Especially effects due to the nonlinear coupling of the different energy domains are correctly reproduced. The accurate reproduction of heavily contact-related situations within acceptable computing time is identified as an issue for future research.
  • Keywords
    integrated circuit design; integrated circuit modelling; microswitches; ohmic contacts; radiofrequency integrated circuits; computing time; hierarchical modeling approach; integrated circuit design; nonlinear energy domain coupling; ohmic contact RF-MEMS switch; physics-based multienergy domain coupled model; radiofrequency microelectromechanical systems; standard IC design frameworks; Biomembranes; Computational modeling; Damping; Electrostatics; Integrated circuit modeling; Mathematical model; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
  • Conference_Location
    Bologna
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4244-7701-2
  • Electronic_ISBN
    1946-1569
  • Type

    conf

  • DOI
    10.1109/SISPAD.2010.5604496
  • Filename
    5604496