DocumentCode
2610842
Title
"Reliability of PtSi-Ti/W-Al Metallization System used in Bipolar Logics"
Author
Canali, Claudio ; Fantini, Fausto ; Queirolo, Giuseppe ; Zanoni, Enrico
Author_Institution
UniversitÃ\xa0 di Bari, 70100 Bari - Italy
fYear
1981
fDate
29677
Firstpage
230
Lastpage
237
Abstract
Metallurgical and electrical failure mechanisms of the PtSi- Ti/W-Al metal system were investigated in commercial bipolar logic devices and in "to the purpose" prepared samples. SEM, microprobe, AES and X-ray diffraction were used to study interdiffusion phenomena and intermetallic compound formation which were correlated to Schottky diode barrier height changes induced by thermal annealing. A few monolayers of oxygen at the Al-Ti/W interface will strongly reduce the degradation phenomena.
Keywords
Annealing; Contacts; Failure analysis; Logic devices; Metallization; Performance analysis; Schottky diodes; Stability; Temperature; Thermal degradation;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1981. 19th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1981.363002
Filename
4208401
Link To Document