DocumentCode
2610862
Title
Pseudo-spectral method for the modelling of quantization effects in nanoscale MOS transistors
Author
Paussa, Alan ; Conzatti, Francesco ; Breda, Dimitri ; Vermiglio, Rossana ; Esseni, David
Author_Institution
DIEGM, Univ. of Udine, Udine, Italy
fYear
2010
fDate
6-8 Sept. 2010
Firstpage
299
Lastpage
302
Abstract
This paper presents a systematic comparison between the numerical efficiency of the pseudo-spectral (PS) and finite difference (FD) methods for the solution of eigenvalue problems related to both n and p-MOS transistors, with different geometries and carrier dimensionalities. Our results indicate remarkable advantages of the PS compared to the FD method in terms of CPU time.
Keywords
MOSFET; eigenvalues and eigenfunctions; finite difference methods; nanoelectronics; CPU time; eigenvalue problems; finite difference methods; n-MOS transistors; nanoscale MOS transistors; numerical efficiency; p-MOS transistors; pseudospectral method; quantization effect modelling; Chebyshev approximation; Eigenvalues and eigenfunctions; Mathematical model; Nanowires; Polynomials; Quantization;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location
Bologna
ISSN
1946-1569
Print_ISBN
978-1-4244-7701-2
Electronic_ISBN
1946-1569
Type
conf
DOI
10.1109/SISPAD.2010.5604499
Filename
5604499
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