• DocumentCode
    2610894
  • Title

    Stable implementation of a deterministic multi-subband Boltzmann solver for Silicon Double-Gate nMOSFETs

  • Author

    Zhao, Kai ; Hong, Sung-Min ; Jungemann, Christoph ; Han, Ru-qi

  • fYear
    2010
  • fDate
    6-8 Sept. 2010
  • Firstpage
    303
  • Lastpage
    306
  • Abstract
    Silicon Double Gate nMOSFETs are simulated using a deterministic Boltzmann solver coupled with a 1D Schrödinger and 2D Poisson Equation. Subthreshold characteristics and high drain bias conditions can be well simulated by the solver stabilized by the H-transformation and the maximum entropy dissipation scheme.
  • Keywords
    MOSFET; Poisson equation; elemental semiconductors; maximum entropy methods; silicon; transforms; 1D Schrödinger; 2D Poisson equation; H-transformation; Si; deterministic multisubband Boltzmann solver; drain bias conditions; maximum entropy dissipation scheme; silicon double-gate nMOSFET; subthreshold characteristics; Convergence; Distribution functions; Electric potential; Logic gates; MOSFETs; Mathematical model; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
  • Conference_Location
    Bologna
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4244-7701-2
  • Electronic_ISBN
    1946-1569
  • Type

    conf

  • DOI
    10.1109/SISPAD.2010.5604500
  • Filename
    5604500
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2610894