• DocumentCode
    2610940
  • Title

    Electron Microscopy and Failure Analysis

  • Author

    Marcus, R.B. ; Sheng, T.T.

  • Author_Institution
    Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
  • fYear
    1981
  • fDate
    29677
  • Firstpage
    269
  • Lastpage
    275
  • Abstract
    As VLSI technology moves in a direction toward more complex chips with increasingly smaller design rules, device failure analysts have been asked to produce microscope images of VLSI features with increasingly greater resolution. This has led to the increased use of the transmission electron microscope (TEM) as an integral part of process development/failure analysis efforts. The major obstacle to the use of the TEM has been the problem of sample preparation; satisfactory sample preparation methods have been developed, and these methods and the use of a TEM test pattern are described. Both the TEM and scanning electron microscope have other modes of operation (in addition to morphology study) that are relevant and in some cases essential to process development/failure analysis effort, and these are described: junction delineation, phase identification, chemical analysis, electrical mapping and microdefect analysis.
  • Keywords
    Chemical analysis; Electron microscopy; Failure analysis; Image analysis; Image resolution; Morphology; Scanning electron microscopy; Testing; Transmission electron microscopy; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1981. 19th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1981.363008
  • Filename
    4208407