Cd1-xZnxTe films obtained by the solid-state reaction of elemental layers

Cd_1-xZn_xTe films of various stoichiometries have been prepared by the two-stage process. This technique involves depositing thin layers of Te, Cd, and Zn onto selected substrates, and then reacting these layers to form the compound film. Cd_1-xZn _xTe films of compositions changing from CdTe to ZnTe have been successfully grown by the two-stage technique on glass and ITO-coated glass substrates. Good quality Cd_1-xZn_xTe layers need to be deposited on CdS-coated transparent substrates for front-wall solar cell fabrication. This is possible for the case of CdTe layers. Zn concentrations higher than 25 at.% in the absorber layer gave rise to films with poor morphology and a highly diffused Cd_1-xZn_xTe/CdS interface. The reason for this behavior is shown to be the exchange reaction between the Zn in the absorber film and the Cd in the CdS window layer