Modeling of the voltage snap-back in amorphous-GST memory devices

Author

Rudan, M. ; Giovanardi, F. ; Tsafack, T. ; Xiong, F. ; Piccinini, E. ; Buscemi, F. ; Liao, A. ; Pop, E. ; Brunetti, R. ; Jacoboni, C.

Author_Institution

Adv. Res. Center on Electron. Syst. (ARCES), Univ. of Bologna, Bologna, Italy

fYear

2010

fDate

6-8 Sept. 2010

Firstpage

257

Lastpage

260

Abstract

Charge transport in amorphous chalcogenide-GST used for memory devices is modeled by means of two contributions: hopping of trapped electrons and motion of band electrons. Field-induced emission is accounted for as the mechanism mainly responsible for the trap-to-band transitions. The experimental snap-back behavior of the I(V) curves is reproduced even in the simple case of one-dimensional, uniform structures as the one considered in the paper.

Keywords

antimony compounds; chalcogenide glasses; germanium compounds; phase change memories; tellurium compounds; Ge₂Sb₂Te₅; amorphous chalcogenide-GST; amorphous-GST memory devices; band electron motion; charge transport; field-induced emission; trap-to-band transitions; trapped electron hopping; voltage snap-back; Electron traps; Energy states; Limiting; Materials; Mathematical model; Resistance; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on

Conference_Location

Bologna

ISSN

1946-1569

Print_ISBN

978-1-4244-7701-2

Electronic_ISBN

1946-1569

Type

conf

DOI

10.1109/SISPAD.2010.5604511

Filename

5604511