DocumentCode
2611173
Title
The Effect of Hydrogen Ambients on Failure Mechanisms in Cmos Metallization
Author
Murthii, Arun K. ; Shewchun, John
Author_Institution
Department of Solid State Science and Technology, Syracuse University, Syracuse NY 13210
fYear
1982
fDate
30011
Firstpage
55
Lastpage
65
Abstract
This report is the first description of the effects of hydrogen on failure mechanisms in an actual device under accelerated test. Time to failure data in vacuum, and in hydrogen is presented. A time sequence of micrographs of the circuit operated in hydrogen clearly shows the arrest of void and extrusion formation on the metallization tracks.
Keywords
Aluminum; Circuit testing; Conductive films; Conductors; Current density; Failure analysis; Hydrogen; Life estimation; Life testing; Metallization;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1982. 20th Annual
Conference_Location
San Diego, NV, USa
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1982.363023
Filename
4208425
Link To Document