Parameter extraction technique for accurate measurement of minority electron mobility in N-p-n AlGaAs/GaAs HBTs

Author

Lee, Seonghearn ; Gopinath, Anand ; Pachuta, Steven J.

Author_Institution

Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA

fYear

1991

fDate

5-7 Aug 1991

Firstpage

287

Lastpage

294

Abstract

Determination of the experimental value of minority electron mobility μ_n^p in p-type GaAs doped to 3.0×10¹⁹ cm^-3 at 300 K is discussed. The value was obtained by extracting the base transit time using the plot of total emitter-collector transit time vs. 1/I_e and parameter extraction of extrinsic parasitics. The experimental value of 2240 cm²/V-s is in good agreement with theoretical predictions which show the increase of μ_n^p with increasing doping concentrations at doping range larger than 10¹⁹ cm^-3. Using this parameter extraction technique, the reduction of the base transit time was observed in the Al_xGa _1-xAs/GaAs composition graded base HBT

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; 300 K; AlGaAs-GaAs; base transit time; composition graded base HBT; doping concentrations; experimental value; extrinsic parasitics; minority electron mobility; mobility measurement; parameter extraction technique; semiconductors; total emitter-collector transit time; Current measurement; Cutoff frequency; Doping; Electron mobility; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Parameter extraction; Performance evaluation; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0491-8

Type

conf

DOI

10.1109/CORNEL.1991.169997

Filename

169997