DocumentCode
2611446
Title
Proposal of a point-source model for highly-accurate analytical 3D calculation of ion implanted dopant profiles
Author
Nishi, K. ; Mochizuki, M. ; Hayashi, H. ; Fukuda, K. ; Kurachi, I.
Author_Institution
Kinki Univ. Tech. Coll., Kumano, Japan
fYear
2010
fDate
6-8 Sept. 2010
Firstpage
193
Lastpage
196
Abstract
A point-source model of ion implantation for 3D simulation is proposed for the first time. Implanted ion profile is calculated by integrals, over implanted surface, of point-source implanted profiles which are calculated by a well-tuned Monte Carlo simulation and are then reconstructed by analytical functions considering various channeling directions. The significance of the proposed model is demonstrated by remarkable accuracy of lateral profiles along the masked surface.
Keywords
Monte Carlo methods; boron; doping profiles; elemental semiconductors; ion implantation; semiconductor doping; silicon; Si; Si:B; highly-accurate analytical 3D calculation; implanted surface; ion implanted dopant profiles; point-source model; well-tuned Monte Carlo simulation; Accuracy; Ion implantation; Mathematical model; Semiconductor process modeling; Silicon; Solid modeling; Three dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location
Bologna
ISSN
1946-1569
Print_ISBN
978-1-4244-7701-2
Electronic_ISBN
1946-1569
Type
conf
DOI
10.1109/SISPAD.2010.5604532
Filename
5604532
Link To Document