DocumentCode
2611604
Title
Spherical harmonics expansion of the conduction band for deterministic simulation of SiGe HBTs with full band effects
Author
Matz, Gregor ; Hong, Sung-Min ; Jungemann, Christoph
Author_Institution
EIT4, Bundeswehr Univ., Neubiberg, Germany
fYear
2010
fDate
6-8 Sept. 2010
Firstpage
167
Lastpage
170
Abstract
A SiGe HBT is simulated using a deterministic Boltzmann equation solver with full band effects. An anisotropic band structure fitted to full band for high energies significantly improves the simulation of SiGe HBTs with a spherical harmonics expansion solver, especially when it comes to breakdown voltages. This makes it a more efficient alternative to stochastic Monte Carlo simulation.
Keywords
Boltzmann equation; Ge-Si alloys; conduction bands; heterojunction bipolar transistors; HBT; SiGe; conduction band; deterministic Boltzmann equation solver; deterministic simulation; full band effects; spherical harmonics expansion; Cutoff frequency; Harmonic analysis; Heterojunction bipolar transistors; Impact ionization; Mathematical model; Monte Carlo methods; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location
Bologna
ISSN
1946-1569
Print_ISBN
978-1-4244-7701-2
Electronic_ISBN
1946-1569
Type
conf
DOI
10.1109/SISPAD.2010.5604540
Filename
5604540
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