DocumentCode
2611616
Title
Degradation of Thin-Gate Mosfet´s under High Electric Field Stress
Author
Ishiuchi, H. ; Matsumoto, Y. ; Mochizuki, T. ; Sawada, S. ; Ozawa, O.
Author_Institution
Toshiba Corporation, Semiconductor Device Engineering Laboratory, 72, Horikawa-cho, Saiwai-ku, Kawasaki, Japan, 210
fYear
1982
fDate
30011
Firstpage
228
Lastpage
232
Abstract
A new type of instability of threshold voltage and transconductance in MOSFET´s under high electric field stress (¿. 7 MV/cm) across the gate oxide is reported. A quantitative model which explains the physical mechanism of these phenomena, and also predicts the intrinsic limitation of the thin gate oxide device is also proposed.
Keywords
Current measurement; Degradation; Electrons; MOS capacitors; MOSFET circuits; Stress; Substrates; Testing; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1982. 20th Annual
Conference_Location
San Diego, NV, USa
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1982.361933
Filename
4208451
Link To Document