DocumentCode
2611741
Title
Inclusion of the Pauli principle in a deterministic Boltzmann equation solver for semiconductor devices
Author
Hong, Sung-Min ; Jungemann, Christoph
Author_Institution
Bundeswehr Univ., Neubiberg, Germany
fYear
2010
fDate
6-8 Sept. 2010
Firstpage
135
Lastpage
138
Abstract
The Pauli principle is included in a deterministic Boltzmann solver for multi-dimensional semiconductor devices. The Newton-Raphson scheme is applied to solve the nonlinear Boltzmann equation, and it is found that the inclusion of the Pauli principle introduces no numerical problems, even for semiconductor devices. The impact of the Pauli principle is numerically investigated for a scaled SiGe HBT.
Keywords
Boltzmann equation; Ge-Si alloys; Newton-Raphson method; heterojunction bipolar transistors; semiconductor device models; Newton-Raphson scheme; Pauli principle; SiGe; deterministic Boltzmann equation solver; multidimensional semiconductor device; nonlinear Boltzmann equation; scaled SiGe HBT; Boltzmann equation; Distribution functions; Mathematical model; Numerical models; Photonic band gap; Scattering; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location
Bologna
ISSN
1946-1569
Print_ISBN
978-1-4244-7701-2
Electronic_ISBN
1946-1569
Type
conf
DOI
10.1109/SISPAD.2010.5604547
Filename
5604547
Link To Document