DocumentCode
2612074
Title
Shunt effect in polycrystalline GaAs solar cells
Author
Honsberg, Christiana ; Bernett, Allen
Author_Institution
Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA
fYear
1990
fDate
21-25 May 1990
Firstpage
772
Abstract
Thin-film polycrystalline GaAs solar cells have the potential for reduced cost while retaining high efficiency. However, solar cells made from polycrystalline GaAs have historically had poor open-circuit voltages. Models that account for these low voltages suggest that in order to make solar cells with high voltages it is necessary to use material with very large grains. As an alternative cause for the low voltages, the presence of Schottky barriers due to inverted grain boundaries is proposed. If this is the case, the requirements on grain size will be reduced. The existence of grain boundary inversion in polycrystalline solar cells is demonstrated, and it is shown that contacting grain boundaries leads to lower voltages
Keywords
III-V semiconductors; Schottky effect; gallium arsenide; grain boundaries; grain size; solar cells; Schottky barriers; cost; efficiency; grain size; inverted grain boundaries; open-circuit voltages; polycrystalline; polycrystalline GaAs solar cells; Circuits; Conducting materials; Degradation; Gallium arsenide; Grain boundaries; Lattices; Low voltage; Metallization; Photovoltaic cells; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location
Kissimmee, FL
Type
conf
DOI
10.1109/PVSC.1990.111725
Filename
111725
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