• DocumentCode
    2612074
  • Title

    Shunt effect in polycrystalline GaAs solar cells

  • Author

    Honsberg, Christiana ; Bernett, Allen

  • Author_Institution
    Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    772
  • Abstract
    Thin-film polycrystalline GaAs solar cells have the potential for reduced cost while retaining high efficiency. However, solar cells made from polycrystalline GaAs have historically had poor open-circuit voltages. Models that account for these low voltages suggest that in order to make solar cells with high voltages it is necessary to use material with very large grains. As an alternative cause for the low voltages, the presence of Schottky barriers due to inverted grain boundaries is proposed. If this is the case, the requirements on grain size will be reduced. The existence of grain boundary inversion in polycrystalline solar cells is demonstrated, and it is shown that contacting grain boundaries leads to lower voltages
  • Keywords
    III-V semiconductors; Schottky effect; gallium arsenide; grain boundaries; grain size; solar cells; Schottky barriers; cost; efficiency; grain size; inverted grain boundaries; open-circuit voltages; polycrystalline; polycrystalline GaAs solar cells; Circuits; Conducting materials; Degradation; Gallium arsenide; Grain boundaries; Lattices; Low voltage; Metallization; Photovoltaic cells; Schottky diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111725
  • Filename
    111725