High performance W-band low noise and power pseudomorphic InGaAs HEMTs

Author

Tan, Kin L. ; Streit, Dwight C. ; Liu, Po-Hsin ; Chow, P. Daniel

Author_Institution

TRW, Redondo Beach, CA, USA

fYear

1991

fDate

5-7 Aug 1991

Firstpage

461

Lastpage

468

Abstract

The authors have successfully developed a 0.1 μm T-gate planar doped pseudomorphic InGaAs high-electron-mobility transistor (HEMT) process for the fabrication of low noise and power devices with record W-band performance. The low noise device has a noise figure of 2.3 dB with an associated gain of 7.5 dB at 92 GHz. When optimized for power using a planar doped channel, the device exhibited an output power of 62.7 mW with 4.0 dB gain and 13.2% power added efficiency at 94 GHz. When tuned for minimum noise, the power device achieved a noise figure of 3.0 dB with 7.4 dB associated gain at 94 GHz

Keywords

III-V semiconductors; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 0.1 micron; 13.2 percent; 2.3 to 3 dB; 4 to 7.5 dB; 62.7 mW; 92 to 94 GHz; EHF; HEMT; InGaAs; MM-wave device; T-gate; W-band; fabrication; high-electron-mobility transistor; low noise device; planar doped channel; power devices; pseudomorphic type; submicron gate device; Design optimization; Doping; Electrons; Gain; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Noise figure; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0491-8

Type

conf

DOI

10.1109/CORNEL.1991.170016

Filename

170016