DocumentCode
2612261
Title
Introduction and analysis of the MRAM with pole type system by using micromagnetic approach for high Gb/Chip
Author
Won, Hyuk ; Cho, Sung Yeol ; Park, Gwan Soo
Author_Institution
Sch. of Electr. Eng., Pusan Nat. Univ., Busan, South Korea
fYear
2010
fDate
9-12 May 2010
Firstpage
1
Lastpage
1
Abstract
In this paper, new MRAM designs for high Gb/Chip with pole system was introduced. In order to overcome problem of reducing power consumption, we proposed new MRAM design that has two additional high permeable poles. Proposed new MRAM designs has a strong switching field owing to two poles added on both sides of the free layer, just like perpendicular magnetic recording heads.
Keywords
MRAM devices; magnetic recording; micromagnetics; power consumption; MRAM designs; micromagnetic approach; perpendicular magnetic recording heads; pole type system; power consumption; Anisotropic magnetoresistance; Energy consumption; Finite element methods; Magnetic heads; Magnetic switching; Magnetization; Micromagnetics; Nonvolatile memory; Perpendicular magnetic recording; Portable computers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Field Computation (CEFC), 2010 14th Biennial IEEE Conference on
Conference_Location
Chicago, IL
Print_ISBN
978-1-4244-7059-4
Type
conf
DOI
10.1109/CEFC.2010.5481651
Filename
5481651
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