Gate-recess and device geometry impact on the microwave performance and noise properties of 0.1μm InAlAs/InGaAs HEMT´s

Author

Kwon, Y. ; Tutt, M. ; Ng, G.I. ; Pavlidis, D. ; Brock, T. ; Marsh, P. ; Oh, J. ; Castagné, J. ; Linh, N.T.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1991

fDate

5-7 Aug 1991

Firstpage

141

Lastpage

150

Abstract

A study in which the deep recess was found to be essential in order to maintain a high gate aspect ratio and thus larger G _mG_ds and C_gs/C _gd ratios is described. This ensures a high power gain and high f_max which is a figure of merit in microwave circuit operation. Also, proper recessed devices show less microwave noise and broader noise minima. The optimum recess for both microwave and noise performance was found to be around I_dss of 500 mA/mm for the HEMT and showed f _max of 217 GHz, f_T of 173 GHz, and a minimum noise figure of 0.6 dB. The device geometry effect was investigated, and the degradation of the device performance due to the parasitics was found for small gate width devices. Large gate width devices were limited in high frequency performance due to the high gate metal resistance. Overall, an appropriate recess, aspect ratio, and device periphery must be selected for optimum microwave performance

Keywords

III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.1 micron; 0.6 dB; 173 GHz; 217 GHz; InAlAs-InGaAs; deep gate-recess; device geometry; gate aspect ratio; gate metal resistance; microwave performance; mushroom gate; noise properties; parasitics; Computational geometry; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Microwave devices; Noise figure; Resists; Signal to noise ratio; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0491-8

Type

conf

DOI

10.1109/CORNEL.1991.170043

Filename

170043