• DocumentCode
    2613594
  • Title

    Comparative Electromigration Tests of Al-Cu Alloys

  • Author

    Merchant, P. ; Cass, T.

  • Author_Institution
    Hewlett-Packard Laboratories, 3500 Deer Creek Rd., Palo Alto, CA. 94304. (415) 857-5428
  • fYear
    1984
  • fDate
    30773
  • Firstpage
    259
  • Lastpage
    263
  • Abstract
    Al-Cu films, obtained from several sputter deposition processes have been subjected to accelerated electromigration life tests. The resultant median times to failure (ranging from 15-1600 h) have been compared with the microstructure and alloy distributions in the films as measured by He backscattering spectroscopy, transmission electron microscopy and diffraction and X-ray diffraction. We conclude that the film texture and location of copper in the films have a strong influence on their electromigration resistance.
  • Keywords
    Backscatter; Electrical resistance measurement; Electromigration; Helium; Life estimation; Life testing; Microstructure; Spectroscopy; Sputtering; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1984. 22nd Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1984.362056
  • Filename
    4208580