• DocumentCode
    2614008
  • Title

    Electromigration-Induced Short Circuit Failure

  • Author

    Towner, Janet M.

  • Author_Institution
    Philips Research Laboratories Sunnyvale, Signetics Corporation, Sunnyvale, CA 94088
  • fYear
    1985
  • fDate
    31107
  • Firstpage
    81
  • Lastpage
    86
  • Abstract
    A study was made of electromigration-induced short circult failure in multilevel metal structures. The material chosen for this study was Al deposited on a layer of TiW, a metallization prone to the formation of whiskers during current stress. The dominant failure mode was found to be interlayer metal shorts. Experiments were performed to examine the relationship between short circuit lifetime and temperature, current density, and interlayer dielectric thickness.
  • Keywords
    Aluminum; Circuit testing; Conducting materials; Conductors; Dielectric thin films; Electromigration; Inorganic materials; Laboratories; Metallization; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1985. 23rd Annual
  • Conference_Location
    Orlando, FL, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1985.362080
  • Filename
    4208607
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2614008