DocumentCode
2614032
Title
Electromigration and 1/f Noise of Aluminum Thin Films
Author
Chen, T.M. ; Djeu, T.P. ; Moore, R.D.
Author_Institution
Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620
fYear
1985
fDate
31107
Firstpage
87
Lastpage
92
Abstract
Electrical noise measurements were made for Al thin films subject to electromigration. The results were related to resistance measurements and SEM observation of the films. It was concluded that 1/f noise measurements can be used as a sensitive tool for detecting electromigration and the magnitude of noise is closely related to the time to failure of the films.
Keywords
Aluminum; Circuits; Conductive films; Conductors; Current density; Electromigration; Noise measurement; Temperature; Testing; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1985. 23rd Annual
Conference_Location
Orlando, FL, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1985.362081
Filename
4208608
Link To Document