DocumentCode
2614042
Title
Electromigration and the Current Density Dependence
Author
Schafft, Harry A. ; Grant, Tammy C. ; Saxena, A.N. ; Kao, Chi-Yi
Author_Institution
National Bureau of Standards, Gaithersburg, MD 20899
fYear
1985
fDate
31107
Firstpage
93
Lastpage
99
Abstract
The empirical expression used to predict metallization resistance to electromigration failure involves the current density raised to the power n. A value for n of 1.5 was obtained from stressing unpassivated Al 1% Si metallization test structures over a range of current densities from 0.5 to 2.5 MA/cm2. The steps taken to ensure an accurate estimate of the metallization stress conditions of temperature and current density to obtain this value are described in detail.
Keywords
Circuit testing; Current density; Electrical resistance measurement; Electromigration; Heating; Integrated circuit testing; Metallization; Semiconductor device testing; Stress; Temperature; Electromigration; VLSI; integrated circuits; metallization; microelectronics; reliability; semiconductors; test chip; test structures;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1985. 23rd Annual
Conference_Location
Orlando, FL, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1985.362082
Filename
4208609
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