Degradation and recovery of SiGe HBTs following radiation and hot-carrier stressing

Device degradation can arise though a variety of stress conditions and mechanisms. Here we focus on SiGe HBTs and effects of γ-radiation and hot-carrier stress on the DC devices characteristics, and subsequent annealing following the stress. Hot-carriers electrical stressing was performed at room temperature by applying a constant reverse-bias voltage across the BE junction, with the collector and substrate open. The radiation and hot-carrier induced changes were followed in time during annealing at room and elevated temperature.