• DocumentCode
    2615022
  • Title

    Effect of hydrogen plasma treatment on SnO2:F films for use in a-Si solar cells

  • Author

    Sato, Kazuo ; Gotoh, Yoshio ; Hayashi, Yasuo ; Nishimura, Hiromichi

  • Author_Institution
    Asahi Glass Co. Ltd., Yokohama, Japan
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    1584
  • Abstract
    The effects of hydrogen plasma treatment on the properties of SnO 2:F films were investigated using X-ray photoelectron spectroscopy (XPS). It was found that silicon oxide formed at the interface between SnO2:F and a-Si:H was decreased by the pretreatment at temperatures above 150°C for highly transparent films with low carrier concentration. The decrease of silicon oxide was closely correlated to a decrease in resistivity corresponding to an increase in Hall mobility of SnO2:F. This suggests that the oxygen desorption from the SnO2:F surface is a dominant effect of the pretreatment. The a-Si solar cell fabricated oil the pretreated SnO2:F film showed improved fill-factor and conversion efficiency, which could be explained by the lowered sheet resistance and the improved SnO2:F/a-Si:H interface
  • Keywords
    Hall effect; X-ray photoelectron spectra; amorphous semiconductors; carrier mobility; desorption; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; fluorine; semiconductor materials; semiconductor thin films; silicon; solar cells; surface treatment; tin compounds; 150 degC; H2; Hall mobility; SnO2:F-Si:H; X-ray photoelectron spectroscopy; amorphous semiconductor; carrier concentration; conversion efficiency; desorption; fill-factor; films; interface; plasma treatment; resistivity; sheet resistance; solar cells; transparent films; Conductivity; Hall effect; Hydrogen; Plasma properties; Plasma temperature; Plasma x-ray sources; Semiconductor films; Silicon; Spectroscopy; Surface resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111875
  • Filename
    111875