• DocumentCode
    2615163
  • Title

    Moisture Resistance of Borophosphosilicate Glass Films

  • Author

    Yoshimaru, M. ; Matsuhasi, H. ; Ajioka, T. ; Matsui, H.

  • Author_Institution
    VLSI Research & Development Center, Oki Electric Industry Co., Ltd., 550-1, Higashiasakawa, Hachioji, Tokyo 193, Japan. (0426) 63-1111
  • fYear
    1987
  • fDate
    31868
  • Firstpage
    22
  • Lastpage
    27
  • Abstract
    The moisture resistance of chemically vapor deposited borophosphosilicate glass (BPSG) films has been studied. The films were annealed at 900°C and exposed to saturated deuterium oxide (D2O) vapor at 120°C. Phosphorus leaching out of the films and water penetration into the films were measured. It has been found that the films with a higher phosphorus concentration not exceeding 9 wt%(P) shows the highest resistance to moisture.
  • Keywords
    Annealing; Boron; Conductive films; Deuterium; Glass; Leaching; Mass spectroscopy; Moisture; Temperature; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1987. 25th Annual
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1987.362150
  • Filename
    4208684
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2615163