• DocumentCode
    2615275
  • Title

    Composition, chemical structure and electronic band structure of rare earth oxide/Si(100) interfacial transition layer

  • Author

    Shankar Subramanian, R.

  • Author_Institution
    Nat. Acoust. Labs., Chatswood, NSW, Australia
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    64
  • Lastpage
    65
  • Abstract
    In this report, we present the composition, chemical structure and electronic band structure of three kinds of ultrathin rare earth oxide (La2O3, Gd2O3, Lu2O3) films formed on Si(100).
  • Keywords
    chemical analysis; chemical structure; conduction bands; dielectric materials; dielectric thin films; elemental semiconductors; gadolinium compounds; interface states; lanthanum compounds; lutetium compounds; silicon; valence bands; Gd2O3 film; Gd2O3-Si; La2O3 film; La2O3-Si; Lu2O3 film; Lu2O3-Si; chemical composition; chemical structure; electronic band structure; rare earth oxide-Si(100) interfacial transition layer; ultrathin rare earth oxide; Atomic layer deposition; Backscatter; Bonding; Chemicals; Electrochemical impedance spectroscopy; Photonic band gap; Semiconductor films; Solids; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1271997
  • Filename
    1271997
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2615275