Bump heat sink technology - A novel assembly technology suitable for power HBTs

Author

Sato, H. ; Miyauchi, M. ; Sakuno, K. ; Akagi, M. ; Hasegawa, M. ; Twynam, J. ; Yamamura, K. ; Tomita, T.

Author_Institution

Sharp Corp., Nara, Japan

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

337

Lastpage

340

Abstract

A novel assembly technique, bump heat sink (BHS), suitable for compound semiconductor power HBTs is proposed and demonstrated. In this technique, the heat generated in the transistor junction is effectively conducted away through a gold bump which is located on the top of each transistor unit. Using this technique, power transistors are demonstrated with power added efficiencies /spl eta//sub add/ of 74%, 66% and 61% for 5.0 W, 8.0 W and 10.0 W output CW, respectively, at 0.9 GHz with V/sub cc/=6 V. A three-stage HBT MMIC power amplifier for GSM class 4 is also demonstrated with /spl eta//sub add/ >55% at V/sub cc/=4 V CW operation.<>

Keywords

MMIC power amplifiers; UHF bipolar transistors; UHF integrated circuits; UHF power amplifiers; bipolar MMIC; flip-chip devices; heat sinks; heterojunction bipolar transistors; integrated circuit packaging; lead bonding; microwave bipolar transistors; microwave power amplifiers; microwave power transistors; power bipolar transistors; 0.9 GHz; 10 W; 4 V; 5 W; 55 percent; 6 V; 61 percent; 66 percent; 74 percent; 8 W; Au bump; HBT MMIC power amplifier; assembly technology; bump heat sink technology; flip chip; power HBT; power added efficiencies; three-stage; Assembly; GSM; Gold; Heat sinks; Heterojunction bipolar transistors; MMICs; Operational amplifiers; Power amplifiers; Power transistors; Time of arrival estimation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394439

Filename

394439