Advanced GaAs-MMIC process technology using high-dielectric constant thin film capacitors by low-temperature RF sputtering method

Author

Nishitsuji, M. ; Tamura, A. ; Kunihisa, T. ; Yaharta, K. ; Shibuya, M. ; Kitagawa, M. ; Hirao, T.

Author_Institution

Matsushita Electric Ind. Co. Ltd., Osaka, Japan

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

329

Lastpage

332

Abstract

The authors have developed a new GaAs-MMIC process technology using the low-temperature RF sputtered SrTiO/sub 3/ thin film capacitors which were combined with WSi-gate self-aligned FETs (SAFETs). The SrTiO/sub 3/ film with high dielectric constant (/spl epsi//sub r/) over 100 and low leakage current density under 10/sup -6/A/cm/sup 2/ at 1 MV/cm was obtained by RF sputtering method with the temperature range of 200/spl sim/300/spl deg/C. This SrTiO/sub 3/ capacitor exhibited no /spl epsi///sub r/ change up to 3.0 GHz, and low insertion losses of 0.29 dB and 0.05 dB were obtained for 32 pF-capacitor (S=10,000 /spl mu/m/sup 2/) at 0.2 GHz and 1.0 GHz, respectively. By integrating these on-chip SrTiO/sub 3/ bypass-capacitors into GaAs-IC, the parasitic inductance of the source-to-ground interconnection is successfully reduced, and the enhanced gain characteristic was obtained for self-biased amplifier circuit.<>

Keywords

III-V semiconductors; MIM devices; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; ferroelectric capacitors; ferroelectric thin films; field effect MMIC; gallium arsenide; sputter deposition; strontium compounds; thin film capacitors; 0.05 dB; 0.2 GHz; 0.29 dB; 1 GHz; 200 to 300 C; 3 GHz; 32 pF; GaAs; III-V semiconductor; MIM capacitors; MMIC process technology; SrTiO/sub 3/ capacitors; WSi gate; enhanced gain characteristic; high-dielectric constant; low leakage current density; low-temperature RF sputtering; parasitic inductance; self-aligned FET; self-biased amplifier circuit; sputtered ferroelectric film; thin film capacitors; Capacitors; Dielectric thin films; FETs; High-K gate dielectrics; Inductance; Insertion loss; Leakage current; Radio frequency; Sputtering; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394441

Filename

394441