• DocumentCode
    2615406
  • Title

    Production of 20 A sec-1 a-Si alloys for use in solar cells

  • Author

    Nath, P. ; Hoffman, K. ; Call, J. ; DiDio, G. ; Ovshinsky, S.R.

  • Author_Institution
    Sovonics Solar Syst., Troy, MI, USA
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    1667
  • Abstract
    The engineering principles used to make >20-A-s-1 intrinsic layers of good-photovoltaic-quality amorphous silicon over large areas are addressed. Deposition equipment was designed and installed in a plasma-assisted CVD (chemical vapor deposition) roll-to-roll processor. Films were made in this machine with gas mixtures containing silane. Same-bandgap tandem solar cells using this material had 8.2% (average) to 8.6% (best cell) conversion efficiencies
  • Keywords
    CVD coatings; amorphous semiconductors; elemental semiconductors; silicon; solar cells; 8.2 to 8.6 percent; amorphous Si solar cells; plasma-assisted CVD; roll-to-roll processor; semiconductor; Amorphous silicon; Costs; Inductors; Manifolds; Photovoltaic cells; Photovoltaic systems; Plasma temperature; Powders; Production; Solar power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111892
  • Filename
    111892
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2615406