Nitride-based QD LEDs

Author

Chang, S.J. ; Su, Y.K. ; Ji, L. Ki ; Chang, C.S. ; Wu, L.W. ; Lai, W.C. ; Fan, H. ; Lam, K.I.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

81

Lastpage

82

Abstract

InGaN/GaN light-emitting diodes (LEDs) with multiple-quantum-dot (MQD) active layers were fabricated by using an interrupted growth method. We have formed nanoscale QDs embedded in quantum wells (QWs) with a typical 3-nm height and 10-nm lateral dimension. It was found that a large 68.4 meV blue shift in electroluminescence (EL) peak position occurred as the injection current increased from 3 to 50 mA for the MQD LED. The large EL blue shift reveals that deep localization of excitons (or carriers) originates form QDs strengthens the band-filling effect as the injection current increases.

Keywords

III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting diodes; quantum well devices; wide band gap semiconductors; 10 nm; 3 nm; InGaN-GaN; InGaN-GaN blue light emitting diodes; band filling effect; carriers localization; deep excitons localization; electroluminescence; injection current; interrupted growth method; lateral dimension; multiple quantum dot; nanoscale QDs embedded quantum wells; nitride based QD LED; Artificial intelligence; Electroluminescence; Gallium nitride; Gold; Information technology; Light emitting diodes; Mechanical engineering; Microelectronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272006

Filename

1272006