• DocumentCode
    2615512
  • Title

    The Effect of Metal Film Topography and Lithography on Grain Size Distributions and on Electromigration Performance

  • Author

    Strausser, Y.E. ; Euzent, B.L. ; Smith, R.C. ; Tracy, B.M. ; Wu, K.

  • Author_Institution
    Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA, 95051
  • fYear
    1987
  • fDate
    31868
  • Firstpage
    140
  • Lastpage
    144
  • Abstract
    Electromigration performance of a variety of test structures has demonstrated a significant dependence of mean time to failure on topography. In particular, the severity and frequency of steps, both over poly and into and out of contacts, are the primary variables influencing the electromigration results. Materials studies show that the most significant materials parameter that changes at steps is grain size. In fact, it is shown that both lithography dimensions and the presence of topographic variations cause a variation in grain size. The conclusion of the study is that both the topography and lithography of the devices must be comprehended in designing test patterns for the estimation of electromigration performance of actual product devices.
  • Keywords
    Electromigration; Failure analysis; Frequency; Grain size; Inorganic materials; Life estimation; Lithography; Metallization; Surfaces; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1987. 25th Annual
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1987.362170
  • Filename
    4208704