DocumentCode
2615512
Title
The Effect of Metal Film Topography and Lithography on Grain Size Distributions and on Electromigration Performance
Author
Strausser, Y.E. ; Euzent, B.L. ; Smith, R.C. ; Tracy, B.M. ; Wu, K.
Author_Institution
Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA, 95051
fYear
1987
fDate
31868
Firstpage
140
Lastpage
144
Abstract
Electromigration performance of a variety of test structures has demonstrated a significant dependence of mean time to failure on topography. In particular, the severity and frequency of steps, both over poly and into and out of contacts, are the primary variables influencing the electromigration results. Materials studies show that the most significant materials parameter that changes at steps is grain size. In fact, it is shown that both lithography dimensions and the presence of topographic variations cause a variation in grain size. The conclusion of the study is that both the topography and lithography of the devices must be comprehended in designing test patterns for the estimation of electromigration performance of actual product devices.
Keywords
Electromigration; Failure analysis; Frequency; Grain size; Inorganic materials; Life estimation; Lithography; Metallization; Surfaces; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1987. 25th Annual
Conference_Location
San Diego, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1987.362170
Filename
4208704
Link To Document