Compositional pulling effect in high Al-content AlGaN films grown on (0001) sapphire substrates

Author

Tsai, Yu-Li ; Wang, Cheng-Liang ; Lin, Po-Hung ; Liao, Wei-Tsai ; Gong, Jyh-Rong

Author_Institution

Dept. of Mater. Sci. & Eng., Feng Chia Univ., Taichung, Taiwan

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

98

Lastpage

99

Abstract

In this presentation, we report strain induced compositional pulling phenomenon in high Al content AlGaN films grown on AlN-coated sapphire substrates. It was found that Al constituent in a high Al content AlGaN film was expelled out of the film in the initial stage of the growth followed by the growth of a AlGaN film having higher Al content. The AlGaN films were characterized by X-ray diffractometry (XRD) for composition evaluation. Absorption spectroscopy was employed for the measurements of absorption spectra of the AlGaN films.

Keywords

III-V semiconductors; MOCVD; X-ray diffraction; aluminium compounds; gallium compounds; semiconductor growth; semiconductor thin films; ultraviolet spectra; wide band gap semiconductors; AlGaN; AlGaN films growth; AlN-Al₂O₃; X-ray diffractometry; XRD; absorption spectra; sapphire substrates; strain induced compositional pulling effect; Aluminum gallium nitride; Artificial intelligence; Buffer layers; Capacitive sensors; Electromagnetic wave absorption; Light emitting diodes; Materials science and technology; Photodetectors; Substrates; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272013

Filename

1272013