• DocumentCode
    2616200
  • Title

    Analysis on the temperature dependent characteristics of SiGe HBTs

  • Author

    Liang, C.-S. ; Pei, Z. ; Hsu, Y.-M. ; Pan, T.-M. ; Liu, Y.-H. ; Liu, C.W. ; Lu, S.C. ; Hsieh, W.-Y. ; Tsai, M.-J.

  • Author_Institution
    Electron. Res. & Service Organ., ITRI, Hsinchu, Taiwan
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    178
  • Lastpage
    179
  • Abstract
    In this paper, the β of SiGe HBT shows negative temperature dependence could prevent thermal runaway is suitable for the radio frequency, high power applications was demonstrated and modeled. The breakdown voltage of HBT was measured as a function of reciprocal temperature. The current gain (β), the base open common-emitter breakdown voltages (BVCEO) and the collector-base breakdown voltage (BVCBO) are the three figures to evaluate the performance of SiGe HBT.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; semiconductor device breakdown; semiconductor device models; semiconductor materials; SiGe; SiGe HBT; collector-base breakdown voltage; common-emitter breakdown voltage; current gain; negative temperature dependence; thermal runaway; Boron; Equations; Feedback; Germanium silicon alloys; Heterojunction bipolar transistors; Performance gain; Radio frequency; Silicon germanium; Temperature dependence; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272050
  • Filename
    1272050
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2616200