• DocumentCode
    2616336
  • Title

    Plasma wave electronics devices

  • Author

    Ryzhii, V. ; Shur, M.S.

  • Author_Institution
    Comput. Solid State Phys., Univ. of Aizu, Japan
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    200
  • Lastpage
    201
  • Abstract
    In deep submicron field effect transistors, the velocity of the surface plasma waves is more than an order of magnitude higher that the electron drift velocity and, therefore, excitation, propagation and generation of these waves should allow for operation at terahertz frequencies. In the plasma wave excitation regime, deep submicron transistors with high electron mobility could be used as tunable resonant detectors of terahertz radiation.
  • Keywords
    electron mobility; field effect transistors; plasma waves; semiconductor plasma; submillimetre wave transistors; electron drift velocity; electron mobility; plasma wave electronics devices; submicron field effect transistors; surface plasma waves; terahertz radiation; Electron mobility; FETs; Frequency; HEMTs; MODFETs; Plasma waves; Radiation detectors; Resonance; Submillimeter wave propagation; Surface waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272060
  • Filename
    1272060