DocumentCode
2616336
Title
Plasma wave electronics devices
Author
Ryzhii, V. ; Shur, M.S.
Author_Institution
Comput. Solid State Phys., Univ. of Aizu, Japan
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
200
Lastpage
201
Abstract
In deep submicron field effect transistors, the velocity of the surface plasma waves is more than an order of magnitude higher that the electron drift velocity and, therefore, excitation, propagation and generation of these waves should allow for operation at terahertz frequencies. In the plasma wave excitation regime, deep submicron transistors with high electron mobility could be used as tunable resonant detectors of terahertz radiation.
Keywords
electron mobility; field effect transistors; plasma waves; semiconductor plasma; submillimetre wave transistors; electron drift velocity; electron mobility; plasma wave electronics devices; submicron field effect transistors; surface plasma waves; terahertz radiation; Electron mobility; FETs; Frequency; HEMTs; MODFETs; Plasma waves; Radiation detectors; Resonance; Submillimeter wave propagation; Surface waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272060
Filename
1272060
Link To Document