• DocumentCode
    2616381
  • Title

    GaAs IC reliability, the next generation

  • Author

    Roesch, W.J.

  • Author_Institution
    TriQuint Semiconductor, Beaverton, OR, USA
  • fYear
    1993
  • fDate
    10-13 Oct. 1993
  • Firstpage
    103
  • Lastpage
    106
  • Abstract
    Improvements in semiconductor reliability are constantly being expected and so far, they have been achieved. A historical perspective is presented which provides evidence regarding changes in the way people think about reliability, for GaAs MESFET integrated circuits, in particular. Comparisons to silicon reliability history, and between old and new philosophies are made. Although not intended as a panacea, the direction towards measuring, analyzing, and controlling the variability of all input parameters to reliability is discussed as the key to reaching the next generation.<>
  • Keywords
    III-V semiconductors; MESFET integrated circuits; gallium arsenide; integrated circuit reliability; reliability; GaAs; IC reliability; III-V semiconductors; MESFET integrated circuits; next generation; reliability evolution; reliability measurement; Circuit optimization; Costs; Gallium arsenide; History; Integrated circuit interconnections; MESFETs; Silicon; Temperature; Testing; Volume measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
  • Conference_Location
    San Jose, CA, USA
  • Print_ISBN
    0-7803-1393-3
  • Type

    conf

  • DOI
    10.1109/GAAS.1993.394491
  • Filename
    394491