DocumentCode
2616381
Title
GaAs IC reliability, the next generation
Author
Roesch, W.J.
Author_Institution
TriQuint Semiconductor, Beaverton, OR, USA
fYear
1993
fDate
10-13 Oct. 1993
Firstpage
103
Lastpage
106
Abstract
Improvements in semiconductor reliability are constantly being expected and so far, they have been achieved. A historical perspective is presented which provides evidence regarding changes in the way people think about reliability, for GaAs MESFET integrated circuits, in particular. Comparisons to silicon reliability history, and between old and new philosophies are made. Although not intended as a panacea, the direction towards measuring, analyzing, and controlling the variability of all input parameters to reliability is discussed as the key to reaching the next generation.<>
Keywords
III-V semiconductors; MESFET integrated circuits; gallium arsenide; integrated circuit reliability; reliability; GaAs; IC reliability; III-V semiconductors; MESFET integrated circuits; next generation; reliability evolution; reliability measurement; Circuit optimization; Costs; Gallium arsenide; History; Integrated circuit interconnections; MESFETs; Silicon; Temperature; Testing; Volume measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location
San Jose, CA, USA
Print_ISBN
0-7803-1393-3
Type
conf
DOI
10.1109/GAAS.1993.394491
Filename
394491
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