DocumentCode
2616447
Title
An asynchronous GaAs MESFET static RAM using a new current mirror memory cell
Author
Chandna, A. ; Brown, R.
Author_Institution
Michigan Univ., Ann Arbor, MI, USA
fYear
1993
fDate
10-13 Oct. 1993
Firstpage
79
Lastpage
82
Abstract
An experimental 1 kB GaAs MESFET static RAM using a new memory cell has been designed, fabricated and tested. The new memory cell is not subject to the destructive read problems which constrain the design of the conventional six-transistor memory cell. The memory cell also provides a much larger access current for readout than is possible using a conventional memory cell of the same area and cell power. Address access times of 1.6 ns have been obtained from a 1 kb test circuit.<>
Keywords
III-V semiconductors; MESFET integrated circuits; SRAM chips; asynchronous circuits; field effect memory circuits; gallium arsenide; nondestructive readout; 1 kB; 1.6 ns; GaAs; III-V semiconductor; MESFET static RAM; address access times; asynchronous; current mirror memory cell; nondestructive readout; Circuit testing; Digital integrated circuits; Diodes; Driver circuits; Gallium arsenide; MESFETs; Mirrors; Random access memory; Read-write memory; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location
San Jose, CA, USA
Print_ISBN
0-7803-1393-3
Type
conf
DOI
10.1109/GAAS.1993.394495
Filename
394495
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