Modeling of nonvolatile floating gate quantum dot memory

Author

Hasaneen, El-Sayed ; Helle, E. ; Bansal, R. ; Huang, W. ; Jain, F.

Author_Institution

Dept. of Electr. & Comput. Eng., Connecticut Univ., Storrs, CT, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

214

Lastpage

215

Abstract

This paper describes a model to simulate electrical characteristics of nonvolatile floating gate quantum dot memory (NVFGQDM) cells during read/write operations. Current-voltage characteristics are obtained using BSIM3v3. Tunneling current is computed based on tunneling of electrons from the channel to the floating quantum dots forming the gate. The maximum number of electrons on a dot is calculated using surface electric field and breakdown voltage of the tunneling dielectric material. Capacitance-voltage characteristics are calculated by solving self-consistently the Schrodinger and Poisson equations.

Keywords

Poisson equation; Schrodinger equation; semiconductor device models; semiconductor quantum dots; semiconductor storage; Poisson equation; Schrodinger equation; breakdown voltage; capacitance-voltage characteristics; current-voltage characteristics; nonvolatile floating gate quantum dot memory modeling; read/write operations; surface electric field; tunneling current; tunneling dielectric material; Computational modeling; Current-voltage characteristics; Dielectric materials; Electric variables; Electrons; Nonvolatile memory; Quantum computing; Quantum dots; Read-write memory; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272066

Filename

1272066