DocumentCode
261697
Title
Design and realization of eGaN FET DCDC converter
Author
Zivanovic, Zoran B. ; Smiljakovic, Vladimir J.
Author_Institution
IMTEL KOMUNIKACIJE AD, Belgrade, Serbia
fYear
2014
fDate
25-27 Nov. 2014
Firstpage
637
Lastpage
640
Abstract
This paper deals with the comparison between two forward converters. Converters, one with the silicon MOSFET and another with eGaN FET, are built and tested through lab measurements. Design steps are described and well documented with measurements results.
Keywords
DC-DC power convertors; III-V semiconductors; elemental semiconductors; gallium compounds; integrated circuit design; power MOSFET; silicon; wide band gap semiconductors; DCDC converter; GaN; Si; eGaN FET; forward converters; silicon MOSFET; Inductors; Logic gates; MOSFET; Silicon; Switches; Temperature measurement; Figure of Merit; MOSFET; eGaN FET;
fLanguage
English
Publisher
ieee
Conference_Titel
Telecommunications Forum Telfor (TELFOR), 2014 22nd
Conference_Location
Belgrade
Print_ISBN
978-1-4799-6190-0
Type
conf
DOI
10.1109/TELFOR.2014.7034489
Filename
7034489
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