DocumentCode
2617152
Title
A new spin on electronics - spintronics
Author
Wolf, Stuart A.
Author_Institution
Virginia Univ., Charlottesville, VA, USA
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
301
Abstract
This paper describes about the discovery of the giant magnetoresistance effect in magnetic multilayers in 1998 and the subsequent development of sensors based on it and the introduction of a new nonvolatile magnetic memory based on a spin dependent tunneling structure that potentially can be a universal replacement for existing semiconductor memories both volatile and nonvolatile. The development of the new field of spin electronics or spintronics is also discussed.
Keywords
giant magnetoresistance; magnetic multilayers; magnetic storage; magnetoelectronics; giant magnetoresistance effect; magnetic multilayers; nonvolatile magnetic memory; semiconductor memories; spin dependent tunneling structure; spintronics; Electrons; Gallium arsenide; Giant magnetoresistance; Magnetic memory; Magnetic multilayers; Magnetic sensors; Magnetic tunneling; Magnetoelectronics; Nonvolatile memory; Semiconductor memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272106
Filename
1272106
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