Experimental study on the mobility universality in ultra thin body SOI pMOSFETs

Author

Tsutsui, G. ; Saitoh, M. ; Nagumo, T. ; Hiramoto, T.

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

361

Lastpage

362

Abstract

This paper describes the mobility in ultra thin body SOI pMOSFETs. It is experimentally demonstrated that the mobility in 10.2-nm-thick SOI pMOSFET degrades only due to the increased acoustic phonon scattering, while other degradation mechanisms appear in 4.3-nm-thick device. It is also demonstrated that the mobility in 4.3-nm-thick device shows universal characteristics against effective electric field for various substrate biases, which is the same behavior as bulk MOSFETs.

Keywords

MOSFET; carrier mobility; elemental semiconductors; silicon-on-insulator; 10.2 nm; 4.3 nm; SOI pMOSFET; Si; acoustic phonon scattering; carrier mobility; metal-oxide-semiconductor FET; silicon-on-insulator; Acoustic devices; Acoustic scattering; Degradation; Immune system; MOSFET circuits; Particle scattering; Permittivity; Phonons; Potential well; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272136

Filename

1272136

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2617610