Ultrathin (2.7 nm) oxy-nitride for suppressing boron penetration characterized by direct hole tunneling current in p+/pMOS

Author

Yu, Chih-hsing ; Chen, Ming-chen ; Chi, Min-Hwa

Author_Institution

Center for Technol. Dev., Worldwide Semicond. Manuf. Corp., Hsinchu, Taiwan

fYear

2000

fDate

2000

Firstpage

99

Lastpage

106

Abstract

One key issue in advanced CMOS technology is the boron penetration effect. In this paper, ultra-thin gate oxy-nitride (2.5 nm~2.7 nm) is characterized by direct hole and electron tunneling currents in p-MOSFETs. The gate oxide with nitrogen-rich layer on top is the most effective for boron penetration suppression. The NO-nitridation is also more effective in suppressing boron diffusion than N₂O-nitridation

Keywords

CMOS integrated circuits; MOSFET; boron; dielectric thin films; diffusion; hole mobility; nitridation; silicon compounds; tunnelling; 2.5 to 2.7 nm; CMOS technology; N₂O; N₂O-nitridation; NO; NO-nitridation; Si:B; SiON-SiO₂-Si; boron diffusion suppression; boron penetration effect; boron penetration suppression; direct hole tunneling current; electron tunneling current; gate oxide; nitrogen-rich top layer; p+/pMOS; p-MOSFETs; ultra-thin gate oxy-nitride; ultrathin oxy-nitride; Boron; CMOS technology; Charge carrier processes; Charge measurement; Current measurement; Doping; Implants; Testing; Transistors; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Technology Workshop, 2000

Conference_Location

Hsinchu

Print_ISBN

0-7803-6374-4

Type

conf

DOI

10.1109/SMTW.2000.883090

Filename

883090