DocumentCode
2620379
Title
Simulation of sub-micron ohmic contacts to GaAs
Author
Li, Yao ; Harrison, H.Barry ; Reeves, Geoffrey K.
Author_Institution
Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia
fYear
1996
fDate
8-11 Dec 1996
Firstpage
255
Lastpage
258
Abstract
Alloyed ohmic contacts to GaAs have been numerically simulated using the Boundary Element Methods. The simulation shows the voltage contours and current contribution in the contact region and external to it and provides characteristics which are unique to sub-micron ohmic contacts. An analytical model developed is in good agreement with the numeral simulation
Keywords
III-V semiconductors; boundary-elements methods; current distribution; gallium arsenide; ohmic contacts; semiconductor device metallisation; semiconductor device models; semiconductor-metal boundaries; voltage distribution; GaAs; alloyed ohmic contacts; analytical model; boundary element methods; current contribution; numerical simulation; submicron ohmic contacts; voltage contours; Analytical models; Australia; Boundary element methods; Contact resistance; Gallium arsenide; Geometry; Microelectronics; Numerical simulation; Ohmic contacts; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location
Canberra, ACT
Print_ISBN
0-7803-3374-8
Type
conf
DOI
10.1109/COMMAD.1996.610121
Filename
610121
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