• DocumentCode
    2621729
  • Title

    Passivation and reactivation of deep Fe and Cu levels in p-type GaAs

  • Author

    Radue, C. ; Conibear, A.B. ; Ball, C.A.B.

  • Author_Institution
    Dept. of Phys., Port Elizabeth Univ., South Africa
  • fYear
    1996
  • fDate
    8-11 Dec 1996
  • Firstpage
    309
  • Lastpage
    312
  • Abstract
    Epitaxial p-type GaAs layers were exposed to a hydrogen plasma. Some of the passivated samples were then annealed under reverse bias in order to determine the energy for thermal dissociation of the passivated deep level-hydrogen complex. In particular, the deep levels attributed to iron and copper were examined. Deep Level Transient Spectroscopy (DLTS) has been used to determine the extent of passivation and reactivation of these deep levels. Although passivation of the copper levels has previously been reported, this is the first time that passivation of the iron level has been observed. A dissociation energy of 0.83 eV was determined for the Fe-H complex
  • Keywords
    III-V semiconductors; annealing; copper; deep level transient spectroscopy; deep levels; gallium arsenide; impurity states; iron; passivation; semiconductor epitaxial layers; DLTS; GaAs:Fe,Cu,H; annealing; deep level; deep level-impurity complex; epitaxial p-type GaAs layer; hydrogen plasma; passivation; reactivation; thermal dissociation energy; Annealing; Copper; Gallium arsenide; Hydrogen; Iron; Passivation; Plasma materials processing; Plasma simulation; Plasma temperature; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
  • Conference_Location
    Canberra, ACT
  • Print_ISBN
    0-7803-3374-8
  • Type

    conf

  • DOI
    10.1109/COMMAD.1996.610132
  • Filename
    610132