Low cost voltage controlled oscillators for X-band mobile communication purposes realized with Si HBTs and SiGe HBTs

Author

Guttich, U.

Author_Institution

Daimler-Benz AG, Ulm, Germany

fYear

1998

fDate

18-18 Sept. 1998

Firstpage

124

Lastpage

125

Abstract

Design and test results of X-band low cost VCOs using silicon bipolar transistors (Siemens SIEGET T502A) and silicon-germanium HBTs (Vishay-Telefunken) as active devices are presented. The oscillators are realized on a 5 mil alumina substrate and can be operated between 9.4 GHz and 9.8 GHz. The employed varactor diode is a commercially available silicon chip (MACOM 45225-132). Measured phase noise data better than -89 dBe @ 100 kHz and -110 dBc @ 1 MHz demonstrate the suitability of these sources for key components in mobile communication systems.

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; microwave circuits; microwave oscillators; mobile communication; phase noise; semiconductor materials; silicon; varactors; voltage-controlled oscillators; 5 mil; 9.4 to 9.8 GHz; HBTs; MACOM 45225-132; Si; SiGe; Siemens SIEGET T502A; Vishay-Telefunken; X-band mobile communication; low cost voltage controlled oscillators; mobile communication systems; phase noise data; varactor diode; Bipolar transistors; Costs; Diodes; Germanium silicon alloys; Noise measurement; Phase measurement; Silicon germanium; Testing; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-5288-2

Type

conf

DOI

10.1109/SMIC.1998.750206

Filename

750206