Electron transport in low temperature grown GaAs

Author

Arifin, P. ; Tansley, T.L. ; Goldys, E.M.

Author_Institution

Semicond. Sci. & Technol. Lab., Macquarie Univ., North Ryde, NSW, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

349

Lastpage

352

Abstract

MBE grown low temperature GaAs layers have been annealed at various temperatures up to 600°C and their structural and transport properties examined. Excess As precipitation is confirmed by TEM measurements. Both hopping and band transport are present in the material annealed at temperatures up to 500°C. The measured mobility for 600°C annealed material agrees well with predictions of Monte Carlo calculations taking full account of precipitate scattering

Keywords

III-V semiconductors; Monte Carlo methods; annealing; electron mobility; gallium arsenide; hopping conduction; molecular beam epitaxial growth; precipitation; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; 500 to 600 C; GaAs; MBE; Monte Carlo simulation; TEM; annealing; band transport; electron mobility; hopping transport; low temperature grown GaAs; precipitate scattering; structure; Annealing; Electrical resistance measurement; Electrons; Gallium arsenide; Gold; Hall effect; Scattering; Substrates; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610142

Filename

610142