Ultrasonic carrier PWM converter employing IGBT in the near future

Author

Nishimura, Toshi Hiro ; Maranesi, Piero G.

Author_Institution

Dept. of Electr. Eng., Oita Univ., Japan

fYear

1989

fDate

15-18 Oct 1989

Abstract

The authors describe an ultrasonic PWM (pulse-width modulated) carrier-frequency current sourced power converter employing IGBTs (insulated-gate bipolar transistors) with a self-aligned DMOS structure. The sinusoidal waveform (rather than the ultrasonic corrected triangular waveform) method is employed for the PWM pulse pattern to operate the converter. Because of the ultrasonic PWM carrier frequency, the converter changes the AC line current waveform to a sinusoidal waveform; thus, the convertor´s filter can be small, and its displacement factor is improved

Keywords

bipolar transistors; insulated gate field effect transistors; power convertors; power transistors; pulse width modulation; AC line current; AC/DC; IGBT; displacement factor; filter; power convertors; power transistor; self-aligned DMOS structure; sinusoidal waveform; ultrasonic PWM carrier; Band pass filters; Circuits; Frequency conversion; Insulated gate bipolar transistors; Low pass filters; Power harmonic filters; Power semiconductor switches; Pulse width modulation; Pulse width modulation converters; Switching converters;

fLanguage

English

Publisher

ieee

Conference_Titel

Telecommunications Energy Conference, 1989. INTELEC '89. Conference Proceedings., Eleventh International

Conference_Location

Florence

Type

conf

DOI

10.1109/INTLEC.1989.88344

Filename

88344