Population inversion among electronic subbands in optically pumped semiconductor quantum wells

Author

Xu, W. ; Zhang, C.

Author_Institution

Dept. of Phys., Wollongong Univ., NSW, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

466

Lastpage

469

Abstract

A theoretical study on population inversion among different electronic subbands, induced by hot-electron interactions with LO-phonons and with photons, is presented for an optically pumped AlGaAs-GaAs double quantum well structure which may behave as a three-level system to generate far-infrared laser radiations. The results obtained indicate that at a fixed pumping intensity, the population inversion among different electronic subbands can be tuned by varying electron temperature through, e.g., applying an in-plane control voltage

Keywords

III-V semiconductors; aluminium compounds; electron-phonon interactions; gallium arsenide; hot carriers; laser theory; optical pumping; population inversion; quantum well lasers; AlGaAs-GaAs; electronic subband; far-infrared laser; hot-electron LO-phonon interaction; optical pumping; population inversion; semiconductor double quantum well; three-level system; Electron optics; Laser excitation; Laser theory; Laser tuning; Optical pumping; Pump lasers; Quantum mechanics; Quantum well lasers; Temperature control; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610167

Filename

610167