High-Q integrated passive elements for high frequency applications

Author

Peroulis, Dimitris ; Mohammadi, Saeed ; Katehi, Linda P B

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

25

Lastpage

28

Abstract

Using MEMS fabrication technology, we have demonstrated very high frequency and high quality factor (Q) varactors, inductors and transformers on a Si substrate. On high resistivity Si, this technology results in broadband analog varactors with continuous tuning range as high as 3:1 and 1 nH inductors with Q>60 at frequencies of 3 to 7 GHz. High efficiency high-Q transformers with coupling factors 0.6res<16 GHz). This technology is compatible with Si fabrication technologies and can be either implemented as a post-processing step or as a part of a vertical chip to interposer packaging scheme.

Keywords

Q-factor; circuit resonance; circuit tuning; micromechanical devices; thin film inductors; transformers; varactors; 3 to 7 GHz; 8 to 16 GHz; MEMS fabrication technology; Si; broadband analog varactors; high efficiency transformers; high resistivity silicon substrate; high-Q integrated passive elements; inductors; post-processing step; transformer coupling factor; transformer self-resonance frequency; varactor tuning range; vertical chip/interposer packaging; very high frequency varactors; Conductivity; Fabrication; Frequency; Inductors; Micromechanical devices; Packaging; Q factor; Transformers; Tuning; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398158

Filename

1398158